| Autor: |
Mariusz Graczyk, Harry J. Whitlow, Yanwen Zhang, Eva-Lena Sarwe, Dian-Tong Lu, Tonghe Zhang, Ivan Maximov |
| Rok vydání: |
2001 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :737-743 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/s0168-583x(00)00658-3 |
| Popis: |
Si 3 N 4 / Si (1 0 0), SiO 2 / Si (1 0 0) and SiO 2 / Si (1 1 1) wafers were implanted by keV Co ions under technical conditions to form thin silicide surface films. A metal vapour vacuum arc (MEVVA) source was employed to produce a high fluence of Co ions that was just sufficient to remove the oxide/nitride overlayer by sputter erosion. This high-fluence implantation under technical vacuum introduces foreign atoms into the implanted layer. The behaviour of these impurities following ∼900°C heat treatment in a N2 atmosphere has been studied. Elemental redistributions, crystal recovery, phase formation and electric properties were analysed. The results show that the annealing leads to an increase in crystal ordering within the implanted layer and stable phase formation, as indicated by a reduction in the channeling signal and a decrease in electrical resistivity. In the case of nitride-coated samples, the heat treatment leads to a reduction in the residual carbon and nitrogen in the samples, while the oxygen content is largely unchanged. In contrast, a remarkable increase in the carbon and especially the oxygen contents is observed in the case of the samples with oxide overlayers, and the Co shows a tendency to spread to greater depths. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect