Mechanism of laser damage of transparent semiconductors
| Autor: | V.A. Gnatyuk |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Physics::Optics Dielectric Radiation Condensed Matter Physics Laser Physics::Geophysics Electronic Optical and Magnetic Materials law.invention Stress (mechanics) Semiconductor Optics Laser damage law Thermal Irradiation Electrical and Electronic Engineering Composite material business |
| Zdroj: | Physica B: Condensed Matter. :935-938 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(01)00865-1 |
| Popis: | Damage of transparent semiconductors and dielectrics under the action of high-intensity laser radiation fluxes is mainly attributed to absorptive inclusions, which being heated up to the melting threshold, result in thermal stresses due to the occurrence of microcracks and pores in materials. In this connection a local spherical area molten by laser radiation and then solidifying in a transparent solid in conditions of external cooling is considered and the temperature fields in the solidified region are calculated. The temperature fields and temporary stress dependences on thickness of a solidified region at different speeds of a solidified front are graphically analyzed. The conditions of occurrence of caverns in irradiated crystals are discussed. The present results can be used in the analysis of the damage processes of optical components of power laser devices, in particular made from ZnSe semiconductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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