ICB deposition and epitaxial growth of GaAs thin films
| Autor: | Makoto Shinohara, Osamu Ishiyama, Junji Saraie, Fumihiko Ohtani, Masatoshi Asari |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Fabrication Ion beam business.industry Analytical chemistry Epitaxy Condensed Matter::Materials Science Ion beam deposition Condensed Matter::Superconductivity Deposition (phase transition) Optoelectronics Thin film business Instrumentation Layer (electronics) Beam (structure) |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 99:576-579 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/0168-583x(94)00640-7 |
| Popis: | The hetero- and homoepitaxial deposition of GaAs films by the ionized cluster beam technique in connection with subsequent neutral beam deposition forming a double layer structure have been studied. It is found that ICB-deposited films have superior quality in comparison with conventional ion beam deposited films and comparable quality like MBE or MOCVD-deposited films. By the fabrication of device structures, it has been proved that the start of film growth from an interface formed by an ICB-deposited As layer is advantageous. Additionally, surface cleaning by low-energy ionized cluster beams has been studied. For the first time, defect-free surface cleaning by low-energy cluster ion beams has been realized. |
| Databáze: | OpenAIRE |
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