| Autor: |
C. P. Hains, Sadhvikas Addamane, P. Ahirwar, S. P. R. Clark, Jörg Hader, Ganesh Balakrishnan, Yi-Ying Lai, Alexandre Laurain, L. R. Dawson, Jerome V. Moloney, D. M. Shima, Robert Bedford, T. J. Rotter |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Vertical External Cavity Surface Emitting Lasers (VECSELs) III. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.2005301 |
| Popis: |
The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 Tm wavelength range are typically based on InGaAsSb/AlGaAsSb quantum wells on AlAsSb/GaSb distributed Bragg reflectors (DBRs) grown lattice-matched on GaSb substrates. The ability to grow such antimonide VECSEL structures on GaAs substrates can take advantage of the superior AlAs based etch-stop layers and mature DBR technology based on GaAs substrates. The growth of such III-Sb VECSELs on GaAs substrates is non-trivial due to the 7.78% lattice mismatch between the antimonide based active region and the GaAs/AlGaAs DBR. The challenge is therefore to reduce the threading dislocation density in the active region without a very thick metamorphic buffer and this is achieved by inducing 90 ° interfacial mist dislocation arrays between the GaSb and GaAs layers. In this presentation we make use of cross section transmission electron microscopy to analyze a variety of approaches to designing and growing III-Sb VECSELs on GaAs substrates to achieve a low threading dislocation density. We shall demonstrate the failure mechanisms in such growths and we analyze the extent to which the threading dislocations are able to permeate a thick active region. Finally, we present growth strategies and supporting results showing low-defect density III-Sb VECSEL active regions on GaAs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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