Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition
| Autor: | E. Roherty-Osmun, P.M. Smith, Y.-D Kim, James G. Fleming, M.-A. Nicolet, J. S. Custer, C.J Galewski, T. Kacsich |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Diffusion barrier Metals and Alloys Analytical chemistry chemistry.chemical_element Mineralogy Surfaces and Interfaces Chemical vapor deposition Tungsten Tungsten borides Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid chemistry.chemical_compound chemistry law Materials Chemistry Deposition (phase transition) Crystallization Layer (electronics) |
| Zdroj: | Thin Solid Films. 320:10-14 |
| ISSN: | 0040-6090 |
| Popis: | The authors have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350 C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 20,000 {micro}{Omega}-cm, the films with the best barrier properties having {approximately}1,000 {micro}{Omega}-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used as the adhesion layer in a tungsten chemical mechanical polishing plug application. The films are x-ray amorphous as-deposited and have crystallization temperatures of up to 900 C. Barrier performance against Cu has been tested using diode test structures. A composition of W{sub .23}B{sub .49}N{sub .28} was able to prevent diode failure up to a 700 C, 30 minute anneal. These materials, deposited by CVD, display properties similar to those deposited by physical deposition techniques. |
| Databáze: | OpenAIRE |
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