Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V Vt Ni-FUSI CMOS transistors
| Autor: | Rita Verbeeck, L. Date, Aude Rothschild, J.-L. Everaert, Christa Vrancken, Anabela Veloso, Masaaki Niwa, Ingrid Debusschere, O. Richard, M. de Potter, Philippe Absil, Malgorzata Jurczak, Christoph Kerner, Thierry Conard, Serge Biesemans, Anne Lauwers, X. Shi, R. Mitsuhashi |
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| Rok vydání: | 2007 |
| Předmět: |
Engineering
business.industry Design of experiments Transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials PMOS logic law.invention Plasma nitridation Reference process CMOS law Electronic engineering Optoelectronics Response surface methodology Electrical and Electronic Engineering Safety Risk Reliability and Quality business NMOS logic |
| Zdroj: | Microelectronics Reliability. 47:521-524 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2007.01.042 |
| Popis: | We report for the first time that the optimization of a HfSiON process on Ni-FUSI devices is best tackled using a design of experiments (DOE [Myers RH, Montgomery. Response surface methodology. New York, DC: Wiley; 1995]) approach. We show that a DOE allows for directly linking process parameters to relevant short channel performance metrics. By tuning the SiO2 thickness, HfSiO thickness, Hf concentration, nitridation parameters and by using response surface modeling (RSM), we report an improvement of 12%/17% in nMOS/pMOS drive current (Idsat 600/255 uA/μm at Ioff = 20 pA/μm and Vdd = 1.1 V) over our reference process. In parallel, we demonstrate that by selecting the right parameters, plasma nitridation can outperform thermal nitridation with NH3. We believe that this new approach will be useful for device engineers and can be easily applied. |
| Databáze: | OpenAIRE |
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