GaAlAs buried multiquantum well lasers fabricated by diffusion‐induced disordering

Autor:	Hisao Nakashima, Yoko Uchida, Tsuneaki Ohta, Tadashi Fukuzawa, Hiroshi Saito, Semura Shigeru
Rok vydání:	1984
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Superlattice Semiconductor device Laser Waveguide (optics) Semiconductor laser theory Transverse mode law.invention Transverse plane law Optoelectronics Stimulated emission business
Zdroj:	Applied Physics Letters. 45:1-3
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.94988
Popis:	A new transverse‐mode‐controlled laser called a buried multiquantum‐well (BMQW) laser has been developed. In order to make it possible to bury the MQW laser active region utilizing the diffusion‐induced disordering (DID) of GaAs‐GaAlAs MQW, zinc was selectively diffused into the MQW structure, resulting in a 3–8‐μm‐wide stripe region. The threshold current is as low as 33 mA with a 300‐μm cavity length and a fundamental transverse mode can be achieved. As a result of studying the relation of the waveguide geometry to the longitudinal and transverse modes it was concluded that this BMQW laser made by a simple DID process acts as an index‐guided laser.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a12c2675b586d1dd5faf4d5bb201b8c https://doi.org/10.1063/1.94988 Zobrazit plný text záznamu