(Invited) Strain Mapping of Layers and Devices Using Electron Holography
| Autor: | Nikolay Cherkashin, Alain Claverie, M. Hyütch, S. Reboh, Florian Hüe, Florent Houdellier, Etienne Snoeck |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Resolution (electron density) Transistor chemistry.chemical_element Strained silicon 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electron holography law.invention PMOS logic chemistry law 0103 physical sciences Optoelectronics 0210 nano-technology business NMOS logic Beam (structure) |
| Zdroj: | ECS Transactions. 33:47-58 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3487533 |
| Popis: | We present the HoloDark technique which has recently been invented and allows one to map strain in two dimensions in layers and devices with nanometer resolution, high precision and large field of view. The technique is based on electron holography and is applicable to all standard focused-ion beam FIB prepared crystalline samples. We show a panorama of typical results obtained in SiGe stacks, ion implanted silicon, strained silicon channel nMOS and pMOS type transistors and in the challenging case of strained silicon FinFETs, In such materials and structures, the HoloDark technique, although still perfectible, appears as the only technique able to provide reliable and extended data against which simulations can be calibrated. |
| Databáze: | OpenAIRE |
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