All-organic thin-film transistors patterned by means of selective electropolymerization

Autor:	Wolfgang Kowalsky, D. Metzdorf, G. Ginev, Francesca Brunetti, R. Parashkov, S. Hartmann, Eike Becker, H.-H. Johannes, Thomas Riedl, Thomas Dobbertin, D. Schneider
Rok vydání:	2003
Předmět:	Conductive polymer Materials science Physics and Astronomy (miscellaneous) business.industry Gate dielectric Pentacene Organic semiconductor chemistry.chemical_compound PEDOT:PSS chemistry Thin-film transistor Polymer chemistry Optoelectronics business Layer (electronics) Polyimide
Zdroj:	Applied Physics Letters. 83:4044-4046
ISSN:	1077-3118 0003-6951
Popis:	We have fabricated fully patterned all-organic thin-film transistors on polyimide substrates using selectively electropolymerized poly (3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate) (PEDOT:PSS) for the source and drain contacts, PEDOT:PSS Baytron P dispersion for the gate electrodes, poly (4-vinyl phenol) or polyvinyl alcohol for the gate dielectric layers, and pentacene or poly (3-butylthiophene) for the organic active layers. We have built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.01 cm2/V s were measured. Functional all-organic transistors have been realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes and that allows the preparation of feature sizes on the micrometer scale.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a0e9413ec50a34d1e7f64723506beef https://doi.org/10.1063/1.1623951 Zobrazit plný text záznamu