All-organic thin-film transistors patterned by means of selective electropolymerization
Autor: | Wolfgang Kowalsky, D. Metzdorf, G. Ginev, Francesca Brunetti, R. Parashkov, S. Hartmann, Eike Becker, H.-H. Johannes, Thomas Riedl, Thomas Dobbertin, D. Schneider |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | Applied Physics Letters. 83:4044-4046 |
ISSN: | 1077-3118 0003-6951 |
Popis: | We have fabricated fully patterned all-organic thin-film transistors on polyimide substrates using selectively electropolymerized poly (3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate) (PEDOT:PSS) for the source and drain contacts, PEDOT:PSS Baytron P dispersion for the gate electrodes, poly (4-vinyl phenol) or polyvinyl alcohol for the gate dielectric layers, and pentacene or poly (3-butylthiophene) for the organic active layers. We have built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.01 cm2/V s were measured. Functional all-organic transistors have been realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes and that allows the preparation of feature sizes on the micrometer scale. |
Databáze: | OpenAIRE |
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