Photoluminescence and reflectance measurements on annealed porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)

Autor:	Neirigelson Ferreira de Barros Leite, M.D. Silva, Carlos Kuranaga, Antonio Fernando Beloto, Mario Ueda, J. R. Senna
Rok vydání:	2003
Předmět:	Nuclear and High Energy Physics Photoluminescence Materials science Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Recrystallization (metallurgy) Porous silicon Plasma-immersion ion implantation Monocrystalline silicon Ion implantation chemistry Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:677-681
ISSN:	0168-583X
DOI:	10.1016/s0168-583x(03)00821-8
Popis:	Porous Silicon (PS), approximately 1 lm thick, was obtained from n-type (1 0 0) monocrystalline silicon wafers using two different anodization conditions. The PS samples were implanted with nitrogen by PIII and annealed at temperatures between 100 and 1000 C. Photoluminescence (PL) and reflectance measurements on the implanted samples for wavelengths between 220 and 800 nm were carried out before and after annealing. Two peaks of PL intensity in the visible region, (640 and 730 nm) were observed. Increasing the annealing temperature reduced the PL intensity and changed the relative intensity between the peaks. A reduction in the ultraviolet reflectance was observed for polished implanted Si samples and for both types of implanted PS samples before annealing. After annealing, the reflectance decreased in the UV region up to 600 C. Above 800 C, there was an increase in reflectance, indicating occurrence of recrystallization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a015a5b058e0b776ff4aea0f5128e52 https://doi.org/10.1016/s0168-583x(03)00821-8 Zobrazit plný text záznamu Full Text from ScienceDirect