Analysis and modelling of IGBTs parallelization fundamentals
| Autor: | Jose Ignacio Garate, Jon Andreu, Estefanía Planas, Asier Matallana, Iker Aretxabaleta |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Computer science
business.industry 020209 energy Electrical engineering 02 engineering and technology Parallel computing Insulated-gate bipolar transistor Operation temperature Driver circuit Power (physics) Semiconductor Power module Parasitic element 0202 electrical engineering electronic engineering information engineering Electronic engineering business Voltage |
| Zdroj: | IECON |
| DOI: | 10.1109/iecon.2016.7793367 |
| Popis: | In some power electronic applications, with high current and voltage ranges, discrete devices are not enough unless parallelization techniques are employed. IGBTs are one of the most common and widespread power electronic semiconductors, to make a parallel design with them, either as a discrete devices, dies, individual cells or power modules, it is necessary to know their static and dynamic behaviour. Besides, operation temperature, device parameter tolerances, driver circuit and power layout, as well as different parasitic inductance also affect its performance. The objective of this article is to show and model how all the aforementioned parameters affect the behaviour and performance of a parallelized IGBT, and highlight the design keys for a successful parallelized design. |
| Databáze: | OpenAIRE |
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