Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS1 –хSeх Materials
| Autor: | D. T. Guseinov, S. M. Asadov, S. N. Mustafaeva, V. F. Lukichev |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Permittivity Materials science Condensed matter physics Band gap Fermi level 02 engineering and technology Dielectric Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials symbols.namesake 0103 physical sciences Materials Chemistry symbols Relaxation (physics) Dissipation factor Dielectric loss Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Russian Microelectronics. 48:203-207 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739719040024 |
| Popis: | The effect of the composition of the GaS–GaSe layered solid solutions on their dielectric characteristics and ac conductivity in the frequency band of 5 × 104 to 3.5 × 107 Hz is investigated. It is shown that with an increase in the selenium content in the GaS1 –хSeх single crystals the real and imaginary parts of the complex permittivity, dissipation factor, and ac conductivity grow significantly. The experimentally observed decrease in the permittivity of the investigated solid solutions with an increase in the frequency from 5 × 104 to 3.5 × 107 Hz is attributed to the relaxation dispersion. The nature of dielectric loss (reach-through conductivity loss) in the GaS1 –хSeх single crystals and the hopping mechanism of charge transfer over the states localized at the Fermi level are established. The main parameters of the localized states in the GaS1 –хSeх band gap are estimated. |
| Databáze: | OpenAIRE |
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