| Autor: |
Masanobu Miyao, Hiroshi Ikenoue, Taizoh Sadoh, Kenta Moto, Takayuki Sugino |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
2017 17th International Workshop on Junction Technology (IWJT). |
| DOI: |
10.23919/iwjt.2017.7966502 |
| Popis: |
Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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