Novel Time-Based Sensing Scheme for STT-MRAMs
| Autor: | Sergio Ruocco, Quang-Kien Trinh, Massimo Alioto |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Computer science Transistor 02 engineering and technology 01 natural sciences 020202 computer hardware & architecture law.invention Orders of magnitude (time) law Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Bit error rate Electronic engineering Time domain Energy (signal processing) Degradation (telecommunications) Voltage |
| Zdroj: | ISCAS |
| DOI: | 10.1109/iscas.2018.8350966 |
| Popis: | This paper proposes a novel STT-MRAM sensing scheme based on time-based sensing (TBS). The TBS scheme converts the bitline voltage into time, then sensing is performed in the time domain rather than in conventional voltage or current domain. Monte Carlo simulations in 65nm show that the proposed TBS improves the read bit error rate (BER) by two-three orders of magnitude, compared to conventional sensing circuit. This is achieved at the cost of less than 1% area penalty and 13–14% performance degradation, and an insignificant (2%) energy penalty when designed at iso-area (minimum delay). As further advantage, TBS requires no analog reference generation and distribution by leveraging gate delay as an implicit timing reference. |
| Databáze: | OpenAIRE |
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