Room-Temperature Stimulated Emission from AlN at 214 nm

Autor:	Vinod Adivarahan, Asif Khan, M. E. Gaevski, Maxim S. Shatalov
Rok vydání:	2006
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Optical power Epitaxy Optical pumping Sapphire Optoelectronics Stimulated emission Metalorganic vapour phase epitaxy Dislocation business Lasing threshold
Zdroj:	Japanese Journal of Applied Physics. 45:L1286-L1288
ISSN:	0021-4922
DOI:	10.1143/jjap.45.l1286
Popis:	We report the first ever room temperature (RT) stimulated emission at 214 nm using high quality AlN layers that were grown over patterned sapphire substrates by pulsed lateral epitaxial overgrowth (PLOG) process. The PLOG process yielded fully coalesced layers with total thicknesses in excess of 10 µm resulting in a reduction in the threading dislocation density by several orders. The stimulated emission was achieved at 214 nm under pulsed optical pumping at RT. The RT threshold optical power density was approximately 9 MW/cm2 and the stimulated edge-emission signal was strongly polarized with E∥c.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::29c841e62db38f2b23ab6cdd81a99881 https://doi.org/10.1143/jjap.45.l1286 Zobrazit plný text záznamu