Thermally evaporated thallium bromide films fabricated at varied substrate temperatures
| Autor: | N. Destefano, Marcelo Mulato |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Bromine
Materials science Scanning electron microscope Vapor pressure Mechanical Engineering Analytical chemistry Energy-dispersive X-ray spectroscopy chemistry.chemical_element Substrate (electronics) chemistry.chemical_compound chemistry Mechanics of Materials Bromide Transmittance Thallium General Materials Science |
| Zdroj: | Journal of Materials Science. 46:2229-2234 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/s10853-010-5061-8 |
| Popis: | Thallium bromide (TlBr) is a promising semiconductor material for application in room temperature radiation detectors. In this study, the growth of thermally evaporated TlBr films was studied as a function of deposition temperature, from room temperature up to 200 °C. The growth mechanisms were investigated using scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and optical UV–Vis transmittance. The deposition rate drops from 5to 0.8 μm/min, for increasing deposition temperature. Two growth processes were observed and discussed: one where a columnar-like regime dominates and the other where a smaller aspect ratio is obtained with a larger growth in the horizontal direction. This leads to the formation of micrometer-sized crystalline cubes. The variation between growth regimes is temperature dependent. A reduction of the concentration of bromine, discussed based on the vapor pressure values, seems to influence the final structure and optical gap of the samples. |
| Databáze: | OpenAIRE |
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