Maskless selective area growth of InP on Sub-μm V-groove patterned Si(001)
| Autor: | Dieter Bimberg, Alois Krost, Marius Grundmann, H. Cerva, R.F. Schnabel |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Nucleation Analytical chemistry Mineralogy Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Chemical-mechanical planarization Materials Chemistry Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film Layer (electronics) Groove (music) Bar (unit) |
| Zdroj: | Journal of Electronic Materials. 24:1625-1629 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Low pressure metalorganic chemical vapor deposition of InP onexactly oriented Si(OOl) substrates with a periodic V-groove pattern of periodicity ≤1.2 μm using a two temperature growth sequence (400 and 640°C) is reported. Planar InP layers with extremely low defect density of 7 × 104 cm−2 are obtained. For InP on V-grooves of width g ≤1.0μm, a planar surface is formed after less than 1 μm of growth. Formation or suppression of antiphase domains (APDs) is a function of the widths of the (OOl)-oriented ridges. For s ≤1 μm, epilayers are single domain and the % MathType!MTEF!2!1!+-% feaafiart1ev1aaatCvAUfKttLearuqr1ngBPrgarmqr1ngBPrgitL% xBI9gBamXvP5wqSXMqHnxAJn0BKvguHDwzZbqegm0B1jxALjhiov2D% aeHbuLwBLnhiov2DGi1BTfMBaebbfv3ySLgzGueE0jxyaibaieYlf9% irVeeu0dXdh9vqqj-hEeeu0xXdbba9frpe0db9Lqpepeea0xd9q8as% 0-LqLs-Jirpepeea0-as0Fb9pgea0lrP0xe9Fve9Fve9qapdbaqaae% GaciGaaiaabeqaamaaeaqbaaGcbaGaei4waSLafGymaeJbaebacqaI% XaqmcqaIWaamcqGGDbqxaaa!482D! $$[\bar 110]$$ direction is oriented parallel to the grooves. At 400°C, nucleation starts homogeneously on {111}-sidewallsand (001)-facets. While heating up to 640°C, InP migrates into the grooves, depleting almost completely the (001)-facets. During growth of the main layer, first the V-grooves are filled up. Subsequently (001)-ridges are overgrown laterally or voids are formed on top of them. This mechanism is responsible for both planarization and APD-suppression. The surface migration length of InP on Si(001) at 640°C is estimated to be ≈0.5 μm. |
| Databáze: | OpenAIRE |
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