High-power room temperature emission quantum cascade lasers at /spl lambda/=9 /spl mu/m
| Autor: | M. Giovannini, E. Boer-Duchemin, Clément Faugeras, J.-Y. Bengloan, Olivier Parillaud, H. Page, Jérôme Faist, Carlo Sirtori, Sébastien Forget, Michel Calligaro |
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| Rok vydání: | 2005 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 7. Clean energy 01 natural sciences Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention Ion implantation Duty cycle law Cascade 0103 physical sciences Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Quantum cascade laser |
| Zdroj: | IEEE Journal of Quantum Electronics. 41:1430-1438 |
| ISSN: | 1558-1713 0018-9197 |
| Popis: | We present two different techniques for processing InP-based /spl lambda/=9 /spl mu/m quantum cascade lasers which improve the thermal dissipation in the device. The first process is based on hydrogen implantation creating an insulating layer to inject current selectively in one part of the active region. The second process uses a thick electroplated gold layer on the laser ridge to efficiently remove the heat produced in the active region. Each process is designed to improve heat evacuation leading to higher performances of the lasers and will be compared to a standard ridge structure from the same wafer. We give evidence that the process of proton implantation, efficient in GaAs based structures, is not directly applicable to InP based devices and we present a detailed analysis of the thermal properties of devices with an electroplated gold thick layer. With these lasers, an average power of 174 mW at a duty cycle of 40% has been measured at 10/spl deg/C. |
| Databáze: | OpenAIRE |
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