Autor: |
T Tzvetkov, R Vichev, J Assa, A Buroff, N Drandarov, R Stoycheva-Topalova, S Necheva |
Rok vydání: |
1998 |
Předmět: |
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Zdroj: |
Vacuum. 51:277-279 |
ISSN: |
0042-207X |
DOI: |
10.1016/s0042-207x(98)00174-2 |
Popis: |
The ion induced structural changes in evaporated layers of a-As 2 S 3 under the action of Au + ions with energies in the range of 6–19 keV and beam fluxes between 10 12 to 10 15 ions\cm 2 are studied. It is shown that the solubility of the evaporated layers of As 2 S 3 increases under Au + ions irradiation at a fluence up to 10 14 ions\cm 2 and decreases at a fluence of more than 10 14 ions\cm 2 . Thus, a positive or a negative ion resists with high resolution can be developed depending on the irradiation dose. Ion-induced changes in the solubility of the layers occur at a depth greater than the penetration range calculated by the TRIM code of the Au + ions. XPS study supports the TRIM results and provides the data for understanding this phenomenon. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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