Carrier Compensation Mechanism of Highly Conductive Anatase Ti0.94Nb0.06O2 Epitaxial Thin Films

Autor:	Hiroyuki Nogawa, Akira Chikamatsu, Hiroshi Kumigashira, Yasushi Hirose, Toshihiro Shimada, Yutaka Furubayashi, Kouichi Yamashita, Tetsuya Hasegawa, Taro Hitosugi, K. Yoshimatsu, Masaharu Oshima, Syoichiro Nadao, Hideyuki Kamisaka
Rok vydání:	2008
Předmět:	Anatase Materials science Dopant business.industry Photoemission spectroscopy Annealing (metallurgy) chemistry.chemical_element Electron Acceptor Oxygen Optics chemistry Optoelectronics Thin film business
Zdroj:	MRS Proceedings. 1074
ISSN:	1946-4274 0272-9172
Popis:	We investigated electrical conduction of anatase Ti0.94Nb0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne. Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne. We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2998a2911de4fc80d9a6905d1118d175 https://doi.org/10.1557/proc-1074-i05-08 Zobrazit plný text záznamu Full text from SpringerLink