Efficient silicon light-emitting diode with temperature-stable spectral characteristics
| Autor: | A. M. Emel’yanov, Nikolai A. Sobolev, T. M. Mel’nikova, S. Pizzini |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Electroluminescence Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Wavelength chemistry law Optoelectronics Quantum efficiency Emission spectrum business Diode Light-emitting diode |
| Zdroj: | Semiconductors. 37:730-735 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The influence of temperature on the parameters of the band-to-band emission spectrum of a light-emitting diode based on single-crystal silicon was investigated; the unprecedentedly high stability against variations in temperature was observed for both the electroluminescence intensity at the peak of the spectral distribution (IELm) and the wavelength corresponding to this peak (λm). The internal quantum efficiency of the light-emitting diode at room temperature is estimated as no lower than 0.1%. The value of IELm varies by no more than ∼10% as the temperature is varied from 120 to 300 K. The value of λm remains virtually constant in the temperature range of 200–300 K. The unprecedentedly high stability of λm is related to interference effects in the oxide film through which the radiation of the light-emitting exits. It is shown that one of the important factors that govern the temperature stability of IELm is a decrease in the lifetime of the minority charge carriers with decreasing temperature. |
| Databáze: | OpenAIRE |
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