High-frequency characterization and modeling of paraelectric∕superconductor resonators for high power-handling microwave passive devices
| Autor: | S. Guyard, Yves Lemaitre, D. Seron, Karim Bouzehouane, B. Marcilhac, J.C. Mage |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 102:083913 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.2800839 |
| Popis: | The theoretical conditions required to observe reduced nonlinearities in passive microwave devices made of a paraelectric (PE) thin layer and a high-temperature superconductor (HTS) thin film are presented. In a transmission line (TL) combining both materials, the nonlinear permittivity er(Vrf) of the PE generates a nonlinear capacitive contribution Cd(Vrf), whereas the nonlinear penetration depth λ(Irf) of the HTS produces a nonlinear inductive contribution Ld(Irf). These contributions act in opposite ways. Under determined conditions that will be defined, they may fully compensate or at least lead to the reduction of the spurious signal level. The HTS nonlinearities may be lowered by employing very thin layers of PE. In this case, the high dielectric loss tangent (tanδ) of PE should not be such an issue. Based on experimental results obtained with superconducting YBa2Cu3O7−δ resonators integrating different thicknesses of paraelectric SrTiO3 (STO) deposited on LaAlO3 substrates, the loss level could the... |
| Databáze: | OpenAIRE |
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