Josephson junctions with silicon interlayer and arrays
| Autor: | G. Ovsyannikov, A. N. Vystavkin, V. N. Gubankov, S.A. Kovtonyuk, I.L. Serpuchenko, Valery P. Koshelets, L. Amatuni |
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| Rok vydání: | 1987 |
| Předmět: |
Josephson effect
Amorphous silicon Materials science Condensed matter physics Silicon Resonance chemistry.chemical_element Atmospheric temperature range Electronic Optical and Magnetic Materials Pi Josephson junction chemistry.chemical_compound chemistry Impurity Electrical and Electronic Engineering Microwave |
| Zdroj: | IEEE Transactions on Magnetics. 23:680-683 |
| ISSN: | 0018-9464 |
| DOI: | 10.1109/tmag.1987.1065047 |
| Popis: | Dc and microwave properties of the Josephson sandwiches with amorphous silicon interlayer based on refractory materials have been investigated in a wide temperature range. The junctions have nonhysteresis I-V curves down to temperatures 2.2K. Reduced normal state resistance value can be varied in the range R N S = (5-5000) Ω μm2by changing the Si interlayer thickness; the I C R N products V o = (0.3-1) mV at the same time. Experimental data can be explained by resonance mechanism of electrical charge transferring through silicon interlayer. The transfer takes place along impurity resonant trajectories caused by the presence of the localized states in the forbidden band of the amorphous silicon. The mutual locking in the arrays has been investigated providing that there is a loop for ac Josephson currents. Due to a high V o value the mutual locking in the two junctions cell has been observed up to the voltage 1 mV which corresponds to submillimeter wavelength. |
| Databáze: | OpenAIRE |
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