Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells
| Autor: | Aniwat Tandaechanurat, Thanaphat Rakpaises, Somsak Panyakeow, Suwit Kiravittaya, Somchai Ratanathammaphan, Visittapong Yordsri, Nanthaphop Sridumrongsak, Noppadon Nuntawong, Supachok Thainoi, Suwat Sopitpan, C. Chevuntulak, Songphol Kanjanachuchai, Chanchana Thanachayanont |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Heterojunction 02 engineering and technology Photovoltaic effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry Condensed Matter::Materials Science law Transmission electron microscopy Quantum dot 0103 physical sciences Solar cell Materials Chemistry Optoelectronics Homojunction 0210 nano-technology business Voltage Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 512:159-163 |
| ISSN: | 0022-0248 |
| Popis: | Interdigitated quantum dots, which are multiple stacks of type-I InAs/GaAs quantum dots and type-II GaSb/GaAs quantum dots, are grown using molecular beam epitaxy. By incorporating the interdigitated quantum dots into a p-i-n AlGaAs/GaAs heterojunction solar cell structure, we demonstrate a photovoltaic effect with a 20.6% improvement in open-circuit voltage, when compared to that of another cell incorporating the same quantum dots but with a p-i-n GaAs homojunction architecture. A transmission electron microscopy is performed to analyze strain-induced defects created in the multi-stack quantum dot structures. The heterojunction solar cell incorporating the interdigitated quantum dots realized in this work would find potential applications in high-efficiency single-junction intermediate band solar cells operating under concentrated sunlight. |
| Databáze: | OpenAIRE |
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