Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection
| Autor: | Nihit Saigal, Anshu Pandey, Anumol Sugathan, Guru Pratheep Rajasekar |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Photocurrent
Materials science Silicon business.industry Mechanical Engineering Doping chemistry.chemical_element Heterojunction 02 engineering and technology Photodetection 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Photodiode law.invention Responsivity Nanocrystal chemistry Mechanics of Materials law Optoelectronics 0210 nano-technology business |
| Zdroj: | Advanced Materials Interfaces. 7:2000056 |
| ISSN: | 2196-7350 |
| DOI: | 10.1002/admi.202000056 |
| Popis: | This study describes the optoelectronic characteristics of CuFeS2/Si nanocrystal/bulk heterojunctions. These heterojunctions show a strong photocurrent response under ambient conditions upon excitation from a wide optical spectrum, from 460 to 2200 nm. The devices comprise of a heterojunction formed between heavily doped n-type silicon (1â��100 I© cm) and copper iron sulfide (CuFeS2) nanocrystal films. Over the spectral range 460â��2200 nm the device shows a fast response (20 µs at NIR wavelengths), along with responsivity and detectivity of 4.68 mA Wâ��1 and 5.29 A� 109 Jones at 1900 nm wavelength. The photocurrent is further observed to be a nonlinear function of power. These properties of the devices are discussed in terms of a defect filling mechanism. Besides their regular photoresponse described above, the devices also exhibit a slower photothermal response, allowing these to also sense hot objects (450 K; excess 6 mW incident onto the device) within the focal plane, thereby extending the useful sensing range of the devices deeper into the infrared. |
| Databáze: | OpenAIRE |
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