Variation of Interfacial Structure and Chemistry of Topotactic {111}MgO-Cu Interfaces with the Oxygen Chemical Potential
| Autor: | S. Hagège, Christian Colliex, D. Imhoff, Martin Hÿtch, Sébastien Laurent, J. Devaud, M. Backhaus-Ricoult |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Magnesium Mechanical Engineering Inorganic chemistry chemistry.chemical_element Condensed Matter Physics Copper Oxygen Electronic states Metal chemistry High oxygen Mechanics of Materials Chemical physics visual_art Lattice (order) visual_art.visual_art_medium Polar General Materials Science |
| Zdroj: | Materials Science Forum. :325-328 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.294-296.325 |
| Popis: | Atomic structure and electronic states of flat polar {111} MgO-Cu interfaces brought to equilibrium at different oxygen activities are studied by HREM and EELS. For high oxygen activity (10 -8 at 900°C) the final magnesia plane at the interface is composed of oxygen and is fully occupied. Copper at the interface adopts a Cu 2 O-like electronic state with a large transfer of charge across the interface. Lattice deformations due to interfacial dislocations are highly localised within the first two copper planes. At lower oxygen activities (10 -12 at 900°C) no visible charge transfer for copper is detected across the interface, interfacial copper remains in its metallic state. HREM imaging reveals perturbations in the copper lattice close to the interface which can be explained by a lattice relaxation due to reduced occupancy of the oxygen end plane. |
| Databáze: | OpenAIRE |
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