Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates

Autor:	P. D. Moran, Thomas F. Kuech, T.-H. Kim, Jeng-Jung Shen, April S. Brown
Rok vydání:	2002
Předmět:	Electron mobility Materials science business.industry Wafer bonding Oxide High-electron-mobility transistor Gallium arsenide chemistry.chemical_compound Lattice constant chemistry Indium phosphide Optoelectronics business Indium gallium arsenide
Zdroj:	2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).
DOI:	10.1109/iscs.2000.947142
Popis:	InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm/sup 2//V at 300 K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.
Databáze:	OpenAIRE
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