An electron spin resonance study of the effects of thermal nitridation and reoxidation onPbcenters at (111) Si/SiO2interfaces

Autor:	P. W. Wyatt, Patrick M. Lenahan, J. T. Yount
Rok vydání:	1993
Předmět:	Silicon Relaxation (NMR) Inorganic chemistry Oxide Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Dielectric Atomic units law.invention chemistry.chemical_compound chemistry law Electron paramagnetic resonance Nitriding
Zdroj:	Journal of Applied Physics. 74:5867-5870
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354158
Popis:	Electron spin resonance of Pb centers is used to probe the dielectric/silicon interface in NH3‐nitrided oxide (NO) and reoxidized nitrided oxide (RNO) dielectrics. The Pb spectra observed in the NO and RNO systems differ from Si/SiO2 systems only in the value of g⊥; the Δg⊥ suggests that the average value of the local strain at the defect site decreases upon nitridation, and is little changed by subsequent reoxidation. The relaxation of the Pb center structure appears to coincide with a reduction of compressive stress in the dielectric and an increase of tensile stress in the silicon substrate. These results suggest that differences in atomic scale strain due to nitrogen incorporation may be involved in the reduced radiation‐ and hot carrier‐induced interface state generation that NO and RNO dielectrics exhibit.
Databáze:	OpenAIRE
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