| Autor: |
R. Adhiri, K. Moschovis, A. Rinta-Möykky, Petteri Uusimaa, A. Souifi, Arto Salokatve, J. Stoimenos, George Kiriakidis, Markus Pessa, Pekka Savolainen |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
Physics and Simulation of Optoelectronic Devices VI. |
| ISSN: |
0277-786X |
| Popis: |
ZnSe-based laser diodes have recently encountered strong competition from those grown from GaN related materials. These two material systems behave in a very different way as far as defect generation and propagation are concerned. For ZnSe-based materials the lifetime of a laser-diode is very sensitive to the density of pre-existing extended defects in the epitaxial material. Therefore, fabrication of a long- lived ZnSe-based laser diode requires an elimination of extended defects as well as making low-resistivity components in order to minimize device heating. We discuss the molecular beam epitaxy growth and characterization of ZnSe-based epitaxial structures on various III-V buffer layers lattice matched to GaAs. The status of our ZnSe-based laser diodes and microcavity LEDs will also be discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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