Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

Autor:	Tiao-Yuan Huang, Chia-Hao Kuo, Chia-Wei Hsu, Hsing-Hui Hsu, Horng-Chih Lin
Rok vydání:	2011
Předmět:	Hysteresis Fabrication Materials science Thin-film transistor Etching Nanowire Nanometre Nanotechnology Air gap (plumbing) Voltage
Zdroj:	NEMS
DOI:	10.1109/nems.2011.6017356
Popis:	In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time-controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2974d042a054f7e5aced4691a79ee0b0 https://doi.org/10.1109/nems.2011.6017356 Zobrazit plný text záznamu