27.2: Characterizations of Flash Memory on Glass Using LTPS TFT with an Ultra-Low-Roughness Poly-Si∕SiO[sub 2] Interface
| Autor: | Chi Lin Chen, C. W. Chen, Yu-Cheng Chen, Ting-Chang Chang, Jia Xing Lin, Po Hao Tsai, Hau-Yan Lu, Po-Tsun Liu, Hung Tse Chen, H. H. Wu, Jason C. Chang |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Surface finish Flash memory law.invention Threshold voltage Flash (photography) Stack (abstract data type) Thin-film transistor law Hardware_INTEGRATEDCIRCUITS Surface roughness Electronic engineering Optoelectronics business |
| Zdroj: | SID Symposium Digest of Technical Papers. 36:1152 |
| ISSN: | 0097-966X |
| DOI: | 10.1889/1.2036205 |
| Popis: | In this paper, flash memories using low temperature poly-Si thin- film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20A. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles. |
| Databáze: | OpenAIRE |
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