| Autor: |
Kitae Park, Myounggon Kang, Yeong-Taek Lee, Han-soo Kim, Hoosung Cho, Youngwook Jeong, Soonwook Hwang, Yong-ll Seo, Jae-Hoon Jang, Won-Seong Lee, Chang-Hyun Kim, Doo-gon Kim, Soon-Moon Jung |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
ISSCC |
| Popis: |
Recently, 3-dimensional (3D) memories have regained attention as a potential future memory solution featuring low cost, high density and high performance. We present a 3D double stacked 4Gb MLC NAND flash memory device with shared bitline structure, with a cell size of 0.0021mum2/bit per unit feature area. The device is designed to support 3D stacking and fabricated by S3 and 45nm floating-gate CMOS technologies. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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