Vanadium oxide films with improved characteristics for ir microbolometric matrices

Autor:	E. B. Shadrin, V. G. Malyarov, I. A. Khrebtov, I. I. Shaganov, Yu. V. Kulikov, V. Yu. Zerov
Rok vydání:	2001
Předmět:	Phase transition Materials science Physics and Astronomy (miscellaneous) Silicon chemistry Sputtering Phase (matter) Analytical chemistry chemistry.chemical_element Noise (electronics) Deposition (law) Grain size Vanadium oxide
Zdroj:	Technical Physics Letters. 27:378-380
ISSN:	1090-6533 1063-7850
DOI:	10.1134/1.1376757
Popis:	Vanadium oxide (VOx) films intended for use in uncooled IR microbolometric matrices were deposited by reactive magnetron sputtering on silicon substrates. Optimum deposition conditions were determined, which provide for the obtaining of films possessing a current 1/f noise level 3–10 times lower, extended dynamic range, and increased working temperature interval. It was found that the 1/f noise level of the VOx films depends on the VO2 phase content and grain size. It is suggested that the observed 1/f noise is caused by the martensite transformation characteristic of the semiconductor-metal phase transition in VO2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::29604a64595a45f4ba8b91c1ede922a6 https://doi.org/10.1134/1.1376757 Zobrazit plný text záznamu Plný text ve formátu PDF