Electrical Characteristic Simulation of Novel AlGaN/GaN Vertical HEMT with Multi-Aperture and SiO2 Current Blocking Layer

Autor:	N.M. Shrestha, Y. Li, Y.Y. Wang, E.Y. Chang
Rok vydání:	2014
Předmět:	Blocking layer Materials science business.industry Aperture Optoelectronics Algan gan High-electron-mobility transistor Current (fluid) business
Zdroj:	Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::295e9110d54ef8bab575a54248fb604e https://doi.org/10.7567/ssdm.2014.ps-6-9 Zobrazit plný text záznamu