High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy

Autor:	Qi-Kun Xue, Lishu Liu, Xiaolong Du, Junqiang Li, Lin Gu, Zengxia Mei, Jin’an Shi, Wenxing Huo
Rok vydání:	2015
Předmět:	Diffraction Materials science business.industry Substrate (electronics) Conductivity Condensed Matter Physics Epitaxy Inorganic Chemistry Crystallography Electron diffraction Transmission electron microscopy Materials Chemistry Optoelectronics business Layer (electronics) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 420:32-36
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2015.03.021
Popis:	We report the growth of single-oriented Cu2O (113) film on faceted MgO (110) substrate by radio-frequency plasma assisted molecular beam epitaxy. A MgO {100} faceted homoepitaxial layer was introduced beforehand as a template for epitaxy of Cu2O film. The epitaxial relationship is determined to be Cu2O (113)//MgO (110) with a tilt angle of 4.76° and Cu2O [11¯0]//MgO [11¯0] by the combined study of in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction and transmission electron microscopy. The film demonstrates a good p-type conductivity and excellent optical properties, indicating that this unique approach is potentially applicable for high-index film preparation and device applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2959fe1a1c265f1fa74fcb0d1d9d9d1e https://doi.org/10.1016/j.jcrysgro.2015.03.021 Zobrazit plný text záznamu Full Text from ScienceDirect