A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology
| Autor: | Mohamed Hussein Eissa, Dietmar Kissinger, Thomas Mausolf, Andrea Malignaggi, Ahmed Gadallah |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 32:331-334 |
| ISSN: | 1558-1764 1531-1309 |
| Popis: | This work presents a 300-GHz low-noise amplifier (LNA) in a SiGe:C 130-nm BiCMOS technology, featuring $f_{t}$/$f_{max}$ of 470/700 GHz. The designed amplifier uses three cascaded stages in a pseudo-differential cascode topology with input and output baluns facilitating single-ended measurements. The first stage is matched trading off noise and gain performance, while a T-type output matching network is used for broadband matching. The interstage matching is performed using center tap transformers. On-wafer measurements show that the designed LNA has a peak small-signal gain of 10.8 dB at 325 GHz, along with a 3-dB bandwidth of 68 GHz and an input 1-dB compression point of -15.6 dBm at 287.5 GHz. The simulated noise figure is better than 12.7 dB over the required band. The circuit occupies 0.26-mm² silicon area and consumes 119 mW from a 3.3-V supply. |
| Databáze: | OpenAIRE |
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