Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts
| Autor: | Ruey-Chyn Yeh, Shyi-Ming Pan, Ru-Chin Tu, Yu-Mei Fan, Jung-Tsung Hsu |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Non-blocking I/O Wide-bandgap semiconductor Gallium nitride Nitride Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Indium tin oxide law.invention chemistry.chemical_compound chemistry law Optoelectronics Electrical and Electronic Engineering business Ohmic contact Diode Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 15:646-648 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2003.810254 |
| Popis: | This study develops a highly transparent nickel-oxide (NiO/sub x/)-indium-tin-oxide (ITO) transparent Ohmic contact with excellent current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The NiO/sub x/-ITO transparent Ohmic contact layer was prepared by electron beam in-situ evaporation without postdeposition annealing. Notably, the transmittance of the NiO/sub x/-ITO exceeds 90% throughout the visible region of the spectrum and approaches 98% at 470 nm. Moreover, GaN LED chips with dimensions of 300 /spl times/ 300 /spl mu/m fabricated with the NiO/sub x/-ITO transparent Ohmic contact were developed and produced a low forward voltage of 3.4 V under a nominal forward current of 20 mA and a high optical output power of 6.6 mW. The experimental results indicate that NiO/sub x/-ITO bilayer Ohmic contact with excellent current spreading and high transparency is suitable for fabricating high-brightness GaN-based light-emitting devices. |
| Databáze: | OpenAIRE |
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