Thin-film silicon-on-insulator (SOI) device applications of selective epitaxial growth
| Autor: | C.K. Subramanian, J.P. Denton, S. Venkatesan, Gerold W. Neudeck |
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| Rok vydání: | 2002 |
| Předmět: |
Very-large-scale integration
Materials science Silicon business.industry Interface (computing) Electrical engineering chemistry.chemical_element Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Epitaxy chemistry Hardware_INTEGRATEDCIRCUITS Optoelectronics Power semiconductor device Thin film business Electronic circuit |
| Zdroj: | Proceedings of 1993 IEEE International SOI Conference. |
| DOI: | 10.1109/soi.1993.344584 |
| Popis: | Silicon-on-insulator (SOI) technology has surged into a position of prominence in recent years. SOI devices provide a viable technology for high-density, large-scale-integration and high performance VLSI circuits. Of late, the potential applications of SOI devices have extended to the field of power devices and mixed-mode analog-digital circuits. In this field of application in particular, selective epitaxial growth techniques such as epitaxial lateral overgrowth (ELO) and Confined Lateral Selective Epitaxial Growth (CLSEG) provide attractive alternatives to SIMOX. ELO and CLSEG provide the means of selectively growing SOI islands in regions where high performance digital MOS circuitry are desired. Due to the low temperatures involved in selective epitaxy, mixed mode integration becomes a lot easier. This paper presents results from fully-depleted SOI devices fabricated by ELO and provides for the first time a study of interface state densities across the various interfaces in the device. In addition, thin-film fully-depleted SOI devices have been fabricated for the first time in SOI device islands fabricated by CLSEG, and the devices have been used to characterize the material. > |
| Databáze: | OpenAIRE |
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