An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT withfmaxof 201 GHz
| Autor: | Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Liu Xinyu, Zhong Yinghui, Zhang Yu-Ming |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Oscillation Transconductance Electrical engineering High-electron-mobility transistor Integrated circuit Condensed Matter Physics Cutoff frequency Electronic Optical and Magnetic Materials Threshold voltage law.invention Resist law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Electron-beam lithography |
| Zdroj: | Journal of Semiconductors. 33:074004 |
| ISSN: | 1674-4926 |
| Popis: | An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2 × 50 μm and source-drain space of 2.4 μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/Al/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics: the extrinsic maximum transconductance, the full channel current, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, −0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits. |
| Databáze: | OpenAIRE |
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