ChemInform Abstract: A Group-IV Ferromagnetic Semiconductor: MnxGe1-x

Autor:	C. S. Hellberg, Aubrey T. Hanbicki, James M. Sullivan, Steven C. Erwin, Berend T. Jonker, A. Wilson, J. E. Mattson, Yun Daniel Park, T. Ambrose, George Spanos
Rok vydání:	2010
Předmět:	Condensed matter physics chemistry.chemical_element General Medicine Manganese Epitaxy Condensed Matter::Materials Science Percolation theory chemistry Ferromagnetism Phase (matter) Antiferromagnetism Curie temperature Condensed Matter::Strongly Correlated Electrons Spin (physics)
Zdroj:	ChemInform. 33
ISSN:	1522-2667 0931-7597
DOI:	10.1002/chin.200215011
Popis:	We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn(x)Ge(1-x), in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p-type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a +/-0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.
Databáze:	OpenAIRE
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