The vertical replacement-gate (VRG) MOSFET
| Autor: | F. Klemens, T. Nigam, Sang Hyun Oh, A. Kornblit, J. M. Hergenrother, D. Monroe |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Gate stack Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Planar CMOS Gate oxide law MOSFET Materials Chemistry Optoelectronics New device Electrical and Electronic Engineering business Lithography |
| Zdroj: | Solid-State Electronics. 46:939-950 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(02)00025-4 |
| Popis: | We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all critical transistor dimensions are controlled preciselywithout lithographyand dryetch, (2) the gate length is defined bya deposited film thickness, independentlyof lithographyand etch, and (3) a high-qualitygate oxide is grown on a single-cry stal Si channel. In addition to this unique combination, the VRG-MOSFET includes self-aligned source/drain extensions (SDEs) formed bysolid source diffusion (SSD), small parasitic overlap, junction, and source/drain capacitances, and a replacement-gate approach to enable alternative gate stacks. We have demonstrated nMOSFETs with an initial VRG process, and pMOSFETs with a more mature process. Since both sides of the device pillar drive in parallel, the drive current per lm of coded width can far exceed that of advanced planar MOSFETs. Our 100 nm VRG-pMOSFETs with tOX ¼ 25 A drive 615 lA/lm at 1.5 V with IOFF ¼ 8 nA/lm—80% more drive than specified in the 1999 ITRS Roadmap at the same IOFF. Our 50 nm VRGpMOSFETs with tOX ¼ 25 A approach the 1.0 V roadmap target of ION ¼ 350 lA/l ma tIOFF ¼ 20 nA/lm without the need for a hyperthin ( |
| Databáze: | OpenAIRE |
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