Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration
| Autor: | T. Bertaud, Cedric Bermond, Bernard Flechet, Thierry Lacrevaz, Emmanuel Defay, J. Abergel, Bassem Salem, S. Capraro |
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| Rok vydání: | 2011 |
| Předmět: |
Permittivity
Aluminium nitride business.industry Surface acoustic wave Relative permittivity Insulator (electricity) Acoustic wave Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering Wideband business |
| Zdroj: | Microelectronic Engineering. 88:564-568 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2010.06.033 |
| Popis: | This paper deals with the electrical wideband frequency and in situ characterization of aluminum nitride (AlN) material. This material is interesting for bulk acoustic wave (BAW) or surface acoustic wave (SAW) devices. In a first step, low frequency characterizations allow to know current versus voltage characteristics, leakages and temperature dependence of the electrical properties. Then, AlN properties in an integrated ''metal/insulator/metal'' configuration are characterized using MIM waveguide and RLCG parameters are measured up to 20GHz. An electrical field breakdown of 7.5MVcm^-^1 and a relative permittivity between 9 and 10 are extracted. Acoustic resonances, validated with Mason one-dimensional simulation, occur near 5 and 12GHz. Finally, the MIM devices performances are determined in a wideband frequency: from 1MHz to 10GHz. |
| Databáze: | OpenAIRE |
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