Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment

Autor: J. K. Tsai, J. C. Lin, Y. P. Luo, S. J. Young, Teen-Hang Meen, T. C. Wu, S. J. Chang, B. Y. Lee, K. C. Lee, Liang-Wen Ji, I. T. Tang
Rok vydání: 2014
Předmět:
Zdroj: 2014 International Conference on Information Science, Electronics and Electrical Engineering.
DOI: 10.1109/infoseee.2014.6948069
Popis: In this study, titanium dioxide (TiO 2 ) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O 2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO 2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO 2 PDs without and with 2 minutes O 2 plasma treatment were 36 and 153 A/W, respectively.
Databáze: OpenAIRE