Secondary dislocation climb during optical excitation of GaAs laser material

Autor:	C. M. Serrano, G. R. Woolhouse, Bo Monemar
Rok vydání:	1978
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Crystallographic defect Optical pumping Condensed Matter::Materials Science Dipole Optics Excited state Vacancy defect Climb Dislocation business Excitation
Zdroj:	Applied Physics Letters. 33:94-97
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.90159
Popis:	Dislocation glide and climb during optical excitation of GaAs laser material have been studied. A dislocation which has been induced to glide under high excitation can be induced to climb by reducing the incident excitation. The climb proceeds in a distinctly different crystallographic direction to, and at a rate which is five or six orders of magnitude slower than, the glide. Furthermore, only the threading portion of the dislocation experiences climb, a misfit dislocation excited at the same external intensity for the same time undergoes no discernible growth. Transmission electron microscopy examination of the climb region shows that it consists of a highly convoluted giant dislocation dipole. The nature of this giant dipole has been determined by a calibrated technique and it has been shown to grow by vacancy climb. Small coherent precipitate particles have been identified for the first time in the neighborhood of the giant dipole.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2903408ad442ef2ff66a49aec22957a1 https://doi.org/10.1063/1.90159 Zobrazit plný text záznamu