On the magnetoresistance of finite semiconductors

Autor:	E. Ramírez de Arellano, Yu. G. Gurevich, G. González de la Cruz, Valeri V. Kucherenko
Rok vydání:	2001
Předmět:	Physics Work (thermodynamics) Quadratic equation Semiconductor Condensed matter physics Magnetoresistance business.industry Bounded function General Physics and Astronomy Spatial dependence business Electrical contacts Magnetic field
Zdroj:	Europhysics Letters (EPL). 53:539-543
ISSN:	1286-4854 0295-5075
DOI:	10.1209/epl/i2001-00186-5
Popis:	We show in this work that the magnetoresistance in a weak magnetic field B under certain conditions has a linear dependence on the magnetic field B. We obtain new formulas for the quadratic and linear dependence of the magnetoresistance on the magnetic field in bounded semiconductors. The linear contribution to the magnetoresistance arises from the spatial dependence of the potential at the electrical contacts. Some fluctuation of physical characteristics at the contacting planes always exists in real experiments, and it leads to the spatial dependence of the potential at the contacts. We describe the inhomogeneity of the potentials at the contacting planes x = 0 and x = a accordingly by the functions 0(z), a(z). The spatial dependence of the contacting potentials can be determined through the magnetoresistance as a function of the magnetic field.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28fe5828f927444e0dbec0dedf205f9f https://doi.org/10.1209/epl/i2001-00186-5 Zobrazit plný text záznamu