Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures
| Autor: | Thomas Mikolajick, A. Kasic, Martin Krupinski, Elke Erben, M. Klude, Thomas Hecht, Johannes Heitmann |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Zirconium
Materials science business.industry Analytical chemistry chemistry.chemical_element Dielectric Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention Capacitor Atomic layer deposition chemistry law Ellipsometry Optoelectronics Electrical and Electronic Engineering Fourier transform infrared spectroscopy business Dram High-κ dielectric |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 26:253-259 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2013.2252374 |
| Popis: | A combination of a common ellipsometric thickness determination from a plane surface and volume-related information gained from a Fourier transform infrared measurement enables monitoring of thin nm-scale layers in 3-D structures. This method was established to characterize dielectric layers deposited by atomic layer deposition within a capacitor structure of a 65-nm DRAM technology. The influence of precursor flow and pulse time on the overall homogeneity and step coverage of zirconium aluminum oxide was investigated. A clear correlation to the precursor amount and the geometry of the deposition tool can be shown. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|