Autor: |
G. Bitz, V. Wesemann, R. Wallenstein, A. Borsutzky, Johannes A. L'huillier |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505). |
DOI: |
10.1109/cleoe.2000.910401 |
Popis: |
Summary form only given. Nd:YAG with a dopant concentration up to 1.3 at% is a well know laser crystal. This widely used material can be grown in excellent quality. Two types of Nd:YAG lasers, microchip-lasers and diode pumped amplifier systems, would benefit from a higher Nd concentration because of the shorter absorption length and a higher energy deposition density. However, it was difficult to grow Nd:YAG with a dopant concentration significantly higher then 1.3 at% due to the different sizes of the Nd- and Y-ion. In this paper we report on Nd:YAG of good optical quality with a dopant concentration of 2 at%. This crystal was grown at F.E.E. GmbH2. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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