Optimization of 3C–SiC/Si heterointerfaces in epitaxial growth
| Autor: | Pierre Masri, Jörg Pezoldt, M. Rouhani Laridjani, M. Averous, T. Wöhner |
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| Rok vydání: | 2000 |
| Předmět: |
Lattice dynamics
Materials science General Computer Science Condensed matter physics Silicon business.industry S-factor Nucleation General Physics and Astronomy chemistry.chemical_element Heterojunction General Chemistry Epitaxy Condensed Matter::Materials Science Computational Mathematics Transverse plane Optics Lattice constant chemistry Mechanics of Materials General Materials Science business |
| Zdroj: | Computational Materials Science. 17:544-550 |
| ISSN: | 0927-0256 |
| Popis: | In this article, we present the basic formalism of the S-correlated theory of misfit induced interface superstructures (MIIS) and nucleation centers for misfit dislocation network (NCMDN). Two main properties play an important role in the theory. The first one is the S factor, which is the ratio of eAective elastic constants over the material atomic density: this factor can be identified from the standard equations of the elasticity theory which, in our approach, represents the basic background. This implies a realistic lattice dynamics model which enables to interpret the velocity of longitudinal, transverse and shear vibrational waves in solids. The second property, nS is a geometric parameter related to the extension of MIIS and to the lattice spacing of misfit dislocation network (MDN). We then apply this theory to several heterosystems and we demonstrate that it can be used to optimize heterointerfaces between host materials characterized by large lattice mismatch. ” 2000 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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