Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials

Autor:	G. F. Kuznetsov
Rok vydání:	2013
Předmět:	Materials science business.industry law Lattice defects Optoelectronics Heterojunction Condensed Matter Physics business Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer law.invention
Zdroj:	Semiconductors. 47:1110-1115
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782613080125
Popis:	A lack of lattice defects and, in particular, a lack of dislocations in the active layer in complex multilayer heteroepitaxial systems is the basic condition for the efficient and reliable operation of optoelectronic microdevices. Minimum elastic stresses in multilayer heteroepitaxial systems and their lack in the active layer at that elevated temperature that occurs in an efficiently operating electronic device is the second necessary condition for its long-term operation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::28eeb06fdd77e58c9b1456cc300ecc66 https://doi.org/10.1134/s1063782613080125 Zobrazit plný text záznamu Plný text ve formátu PDF