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This paper describes a new test structure for use in determining the thickness of a uniform conducting film. The structure incorporates the van der Pauw cross method to determine the effective sheet resistance of a vertical, uniformly doped cross section of a polysilicon film and a bridge resistor to determine thickness of the film. By using a composite structure, which consists of the vertical cross structure and a conventional planar cross-bridge test structure, it is possible to obtain the thickness, linewidth, and resistivity of a conducting line. |
